Dynamic Single-Electron Transistor Modeling for High-Frequency Capacitance Characterization
نویسندگان
چکیده
Based on the time-dependent master equation and taking dynamic gate current into account, a new single-electron transistor (SET) model is proposed, which can represent intrinsic terminal capacitances transcapacitances. By using this model, bias, frequency temperature dependences of these are evaluated. Since implemented in SPICE circuit simulator, it be used to analyze high-frequency behavior circuits, including SETs applied characterization SET-based inverting amplifier time.
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ژورنال
عنوان ژورنال: Applied sciences
سال: 2022
ISSN: ['2076-3417']
DOI: https://doi.org/10.3390/app12168139